Representative package image · Images are representative; refer to the datasheet for complete specifications.
RGT8NS65DGTL
- Manufacturer
- ROHM Semiconductor
- Category
- Package / Case
- TO-263-3
- Description
- IGBT 650V 8A 65W TO-263S
Product Specifications
16 specifications
Current - Collector (Ic) (Max)
8 A
Current - Collector Pulsed (Icm)
12 A
Gate Charge
13.5 nC
IGBT Type
Trench Field Stop
Input Type
Standard
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 175°C (TJ)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Part Status
Not For New Designs
Power - Max
65 W
Reverse Recovery Time (trr)
40 ns
Supplier Device Package
LPDS
Td (on/off) @ 25°C
17ns/69ns
Test Condition
400V, 4A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 4A
Voltage - Collector Emitter Breakdown (Max)
650 V