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PMZB370UNE,315
- Manufacturer
- Rochester Electronics
- Package / Case
- —
Product Specifications
16 specifications
Current - Continuous Drain (Id) @ 25°C
900mA (Ta)
Part Status
Active
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
1.16 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
78 pF @ 25 V
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
3-XFDFN
Power Dissipation (Max)
360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs
490mOhm @ 500mA, 4.5V
Supplier Device Package
DFN1006B-3
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±8V
Vgs(th) (Max) @ Id
1.05V @ 250µA