Images are representative; refer to the datasheet for complete specifications.
MJD41CTF
- Manufacturer
- Rochester Electronics
- Package / Case
- TO-252-3
- Description
- NPN EPITAXIAL SILICON TRANSISTOR
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
6 A
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A, 4V
Frequency - Transition
3MHz
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status
Obsolete
Power - Max
1.75 W
Supplier Device Package
TO-252, (D-Pak)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max)
100 V