No image available
MJD253-1G
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
4 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA, 1V
Frequency - Transition
40MHz
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Part Status
Active
Power - Max
1.4 W
Supplier Device Package
I-PAK
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
100 V