Images are representative; refer to the datasheet for complete specifications.
FGB7N60UNDF
- Manufacturer
- Rochester Electronics
- Category
- Package / Case
- TO-263-3
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Product Specifications
17 specifications
Current - Collector (Ic) (Max)
14 A
Current - Collector Pulsed (Icm)
21 A
Gate Charge
18 nC
IGBT Type
NPT
Input Type
Standard
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Part Status
Active
Power - Max
83 W
Reverse Recovery Time (trr)
32.3 ns
Supplier Device Package
D2PAK (TO-263)
Switching Energy
99µJ (on), 104µJ (off)
Td (on/off) @ 25°C
5.9ns/32.3ns
Test Condition
400V, 7A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 7A
Voltage - Collector Emitter Breakdown (Max)
600 V