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BDP949E6327HTSA1
- Manufacturer
- Infineon
- Package / Case
- —
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
3 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 1V
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package / Case
TO-261-4, TO-261AA
Part Status
Obsolete
Power - Max
5 W
Supplier Device Package
PG-SOT223-4-10
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60 V