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2SD2096T114E
- Manufacturer
- ROHM Semiconductor
- Package / Case
- —
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
3 A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 5V
Frequency - Transition
8MHz
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package / Case
HRT
Part Status
Obsolete
Power - Max
1.8 W
Supplier Device Package
HRT
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60 V