Images are representative; refer to the datasheet for complete specifications.
2SB1181TLQ (2SB1181) PNP Bipolar Transistor TO-252 1A 80V
2SB1181TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252
- Description
- 2SB1181TLQ, PNP polarity silicon-based bipolar transistor. TO-252 package type, 1A maximum collector current, 80V voltage, 15W power dissipation.
About 2SB1181TLQ (2SB1181) PNP Bipolar Transistor TO-252 1A 80V
2SB1181TLQ is a PNP type silicon bipolar transistor. Packaged in TO-252 case with 1A maximum collector current and 80V collector-emitter voltage. Maximum power dissipation 15W, forward current transfer ratio (hFE) minimum 90. Capable of operating up to 175°C. Can be used in power switching and amplification applications.
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA, 3V
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status
Active
Power - Max
10 W
Supplier Device Package
CPT3
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80 V