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2SB1132T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- —
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 100mA, 3V
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package / Case
TO-243AA
Part Status
Active
Power - Max
2 W
Supplier Device Package
MPT3
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
32 V