Images are representative; refer to the datasheet for complete specifications.
2N2219A TO-39 800mA NPN BJT Transistor
2N2219A-NTE
- Manufacturer
- NTE Electronics
- Package / Case
- —
- Description
- Silicon NPN transistor, 0.8A collector current, 300 MHz ft, TO-39 package.
About 2N2219A TO-39 800mA NPN BJT Transistor
2N2219A is a silicon-based NPN transistor. Maximum collector current is 0.8A, maximum power dissipation is 0.8W, maximum collector-base voltage is 75V. Operating temperature rating to 175°C. 300 MHz transition frequency suitable for medium-frequency applications. Supplied in TO-39 metal package.
Product Specifications
10 specifications
Current - Collector (Ic) (Max)
800 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Part Status
Active
Power - Max
800 mW
Supplier Device Package
TO-39
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40 V