Images are representative; refer to the datasheet for complete specifications.
FMH23N50E (23N50E) N-Channel 23A 500V TO-3P Mosfet Transistor
FMH23N50E
- Manufacturer
- Fuji Electric
- Package / Case
- TO-3P (3 pin)
About FMH23N50E (23N50E) N-Channel 23A 500V TO-3P Mosfet Transistor
FMH23N50E; a N-Channel silicon power MOSFET from Fuji Electric's Super FAP-E3 series, distinguished by low power loss and low noise characteristics. With strong electrical characteristics such as 500V VDS, ±23A ID, low RDS(on) ≈ 0.21Ω (at 10V drive), it is reliably used in power electronics applications requiring high efficiency.
It offers stable switching performance through controlled dv/dt behavior, narrow gate threshold tolerance (3.0V ±0.5V), and high avalanche rating.
Tag code: 23N50E
Applications: SMPS, UPS, DC-DC converters, power regulators, etc.
Its characteristics ensure low heat generation, fast switching, and long-term reliable operation in high-voltage power circuits.
| Vds - Drain-Source Voltage | 500V |
|---|---|
| Id Drain Current | 23A |
| Mosfet | Channel Type | N Channel |
| Pd | Power Dissipation | 315W |
| Vgs - Gate-Source Voltage | 30V |
| Transistor | Package | TO-3P |
| Operating Temperature Range | -55 C ~ +150 C |
| Channel Count | Single Channel |
FMH23N50E Datasheet to access the file.