Images are representative; refer to the datasheet for complete specifications.
IKW50N65ES5 (K50EES5) 80A 650V TO-247 IGBT Transistor
IKW50N65ES5
About IKW50N65ES5 (K50EES5) 80A 650V TO-247 IGBT Transistor
IKW50N65ES5 (K50EES5) 80A 650V TO-247 IGBT Transistor
| Mount Type | Through Hole |
|---|---|
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Test Condition | 400V- 50A- 8.2Ohm- 15V |
| Power - Max | 274 W |
| Reverse Recovery Time (trr) | 70 ns |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Catalog | Transistors - IGBTs - Single |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 120 nC |
| IGBT Type | Trench |
| Switching Energy | 1.23mJ (on)- 550µJ (off) |
| Td (on/off) @ 25°C | 20ns/127ns |
| Vce(on) (Max) @ Vge- Ic | 1.7V @ 15V- 50A |