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MBT35200MT1G
- Manufacturer
- onsemi
- Package / Case
- —
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
2 A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1.5A, 1.5V
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Part Status
Active
Power - Max
625 mW
Supplier Device Package
6-TSOP
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
310mV @ 20mA, 2A
Voltage - Collector Emitter Breakdown (Max)
35 V