Images are representative; refer to the datasheet for complete specifications.
2SD1918TLQ (2SD1918, D1918) NPN TO-252 1.5A 160V BJT Transistor
2SD1918TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252
- Description
- 2SD1918TLQ in TO-252 package, NPN type bipolar transistor with 1.5A collector current and 160V maximum Vce.
About 2SD1918TLQ (2SD1918, D1918) NPN TO-252 1.5A 160V BJT Transistor
2SD1918TLQ in TO-252 package, NPN type bipolar transistor with 1.5A collector current and 160V maximum Vce.
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
1.5 A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA, 5V
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status
Active
Power - Max
10 W
Supplier Device Package
CPT3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
2V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
160 V