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2SC5566-TD-E
- Manufacturer
- onsemi
- Package / Case
- —
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
4 A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 2V
Frequency - Transition
400MHz
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package / Case
TO-243AA
Part Status
Active
Power - Max
1.3 W
Supplier Device Package
PCP
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
225mV @ 100mA, 2A
Voltage - Collector Emitter Breakdown (Max)
50 V