Images are representative; refer to the datasheet for complete specifications.
2SC4672T100Q (2SC4672) 2A 50V 0.5W SOT-89 NPN BJT Transistor
2SC4672T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-89
- Description
- 2SC4672T100Q, 50V 2A collector current, 0.5W power dissipation NPN silicon transistor.
About 2SC4672T100Q (2SC4672) 2A 50V 0.5W SOT-89 NPN BJT Transistor
2SC4672T100Q, SOT-89 package NPN silicon transistor. 50V maximum collector-emitter voltage, 2A maximum collector current and 0.5W power dissipation capacity for medium power applications. Transit frequency 210 MHz under frequency conditions with minimum hFE of 82. Operates stably at operating temperatures up to 150°C.
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
2 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 2V
Frequency - Transition
210MHz
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package / Case
TO-243AA
Part Status
Active
Power - Max
500 mW
Supplier Device Package
MPT3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50 V