2SB1570 PNP Darlington Transistor MT-200 12A 150V 150W

Images are representative; refer to the datasheet for complete specifications.

2SB1570 PNP Darlington Transistor MT-200 12A 150V 150W

2SB1570

Package / Case
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Description
2SB1570 silicon PNP Darlington transistor. 12A maximum current, 150V maximum voltage, 150W power dissipation. MT-200 package.

About 2SB1570 PNP Darlington Transistor MT-200 12A 150V 150W

2SB1570 is a silicon PNP Darlington transistor designed for high current and power applications. With 12A maximum collector current, 150V maximum Vce voltage, and 150W power dissipation capacity, it is suitable for power driver circuits. With 55 MHz transition frequency and 10000 minimum hFE (current gain), it can be used in fast switching and control applications. Supplied in MT-200 package.

Product Specifications

13 specifications
Current - Collector (Ic) (Max) 12 A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 7A, 4V
Frequency - Transition 50MHz
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Package / Case 3-ESIP
Part Status Obsolete
Power - Max 150 W
Supplier Device Package MT-200
Transistor Type PNP - Darlington
Vce Saturation (Max) @ Ib, Ic 2.5V @ 7mA, 7A
Voltage - Collector Emitter Breakdown (Max) 150 V