2SB1240TV2R (2SB1240) PNP Transistor SIP-3 2A 40V 1W

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2SB1240TV2R (2SB1240) PNP Transistor SIP-3 2A 40V 1W

2SB1240TV2R

Manufacturer
ROHM Semiconductor
Package / Case
ATV
Description
2SB1240TV2R silicon PNP transistor. Maximum collector current 2A, Vce 40V, power dissipation 1W. SIP-3 package type.

About 2SB1240TV2R (2SB1240) PNP Transistor SIP-3 2A 40V 1W

2SB1240TV2R is a discrete PNP transistor with silicon material structure. Supplied in SIP-3 package format, this component is used in medium power applications with maximum collector current 2A and Vce voltage 40V. Power dissipation 1W, operating temperature up to 185°C. Minimum HFE value 180, applied in general purpose amplification and switching circuits.

Product Specifications

13 specifications
Current - Collector (Ic) (Max) 2 A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA, 3V
Frequency - Transition 100MHz
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Package / Case 3-SIP
Part Status Obsolete
Power - Max 1 W
Supplier Device Package ATV
Transistor Type PNP
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 32 V