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2SA2125-TD-E (AY) PNP Transistor SOT-89 3A 50V

2SA2125-TD-E

Manufacturer: onsemi
Category: Bipolar Transistors (BJTs) › Transistors - Bipolar (BJT) - Arrays
Package / Case: SOT-89
Description: 2SA2125, 50V, 3A maximum current, 1.3W power dissipation capacity SOT-89 package PNP silicon transistor. AY SMD code.

About 2SA2125-TD-E (AY) PNP Transistor SOT-89 3A 50V

2SA2125-TD-E is a PNP silicon transistor designed with high current capacity and compact SOT-89 packaging. With 50V maximum Vce voltage, 3A maximum collector current and 1.3W power dissipation, it is suitable for medium power applications. With 390MHz transition frequency and 200 minimum hFE, it can be used in driver and switching circuits. Maximum junction temperature is 150°C.

Product Specifications

13 specifications

Current - Collector (Ic) (Max) 3 A

Current - Collector Cutoff (Max) 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V

Frequency - Transition 390MHz

Mounting Type Surface Mount

Operating Temperature 150°C (TJ)

Package / Case TO-243AA

Part Status Active

Power - Max 3.5 W

Supplier Device Package PCP

Transistor Type PNP

Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 2A

Voltage - Collector Emitter Breakdown (Max) 50 V