Images are representative; refer to the datasheet for complete specifications.
2SA2071T100Q (2SA2071) PNP BJT Transistor SOT-89 3A 60V
2SA2071T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-89
- Description
- 2SA2071T100Q silicon PNP transistor, SOT-89 package, 3A maximum collector current and 60V maximum collector-emitter voltage. 0.5W power dissipation, 180 MHz transition frequency.
About 2SA2071T100Q (2SA2071) PNP BJT Transistor SOT-89 3A 60V
2SA2071T100Q is a general-purpose PNP transistor using silicon material. Manufactured in SOT-89 package, this transistor features 3A maximum collector current, 60V maximum collector-emitter voltage and 0.5W maximum power dissipation. With 180 MHz transition frequency suitable for mid-speed applications, it provides good amplification characteristics with minimum hFE of 120. Reliable performance at maximum operating temperature of 150°C.
Product Specifications
13 specifications
Current - Collector (Ic) (Max)
3 A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA, 2V
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package / Case
TO-243AA
Part Status
Active
Power - Max
2 W
Supplier Device Package
MPT3
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60 V