2SA1812T100Q PNP Transistor SOT-89 0.5A 400V 2W

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2SA1812T100Q PNP Transistor SOT-89 0.5A 400V 2W

2SA1812T100Q

Manufacturer
ROHM Semiconductor
Package / Case
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Description
2SA1812T100Q PNP Transistor SOT-89 0.5A 400V 2W

About 2SA1812T100Q PNP Transistor SOT-89 0.5A 400V 2W

PNP silicon transistor in SOT-89 SMD package. Suitable for industrial applications with maximum collector current of 0.5A and collector-emitter voltage of 400V. 2W power dissipation, 12MHz transition frequency, maximum operating temperature of 150°C. hFE minimum 82.

Product Specifications

13 specifications
Current - Collector (Ic) (Max) 500 mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 5V
Frequency - Transition 12MHz
Mounting Type Surface Mount
Operating Temperature 150°C (TJ)
Package / Case TO-243AA
Part Status Obsolete
Power - Max 500 mW
Supplier Device Package MPT3
Transistor Type PNP
Vce Saturation (Max) @ Ib, Ic 1V @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 400 V